PLASMA CHAMBER HAVING AN UPPER ELECTRODE HAVING CONTROLLABLE VALVES AND A METHOD OF USING THE SAME

摘要

The present invention relates to a plasma processing apparatus including a vapor chamber, a gas supply source, and an upper electrode assembly. The upper electrode assembly includes a gas distribution plate having multiple holes in the bottom surface and an upper electrode having at least one gas nozzle and at least one controllable valve which is connected to the at least one gas nozzle. The plasma processing apparatus more includes a controller which is comprised to generate a control signal. At least one controllable valve is comprised to be controlled based on the control signal. A method for controlling a control system and the controllable valve is also explained. [Reference numerals] (702) Set a controllable valve at an initial position;(704) Process a preset number of wafers;(706) Measure the thickness profile of at least one wafer;(708) Compare the measured thickness profile with a previous thickness profile;(710) Generate a control signal based on the comparison result;(712) Control the controllable valve based on the control signal