| 摘要 |
The device has an interlayer insulation film (500) with multiple holes (H) located on a substrate (100) on which an electroconductive wiring (200) is formed. The electroconductive wiring (400) formed on the interlayer insulation film is electrically connected with the electroconductive wiring (200) through holes. A resistance memory material (300) including the resistance memory material films (310,320) having non-uniform specific resistance profile is arranged along orthogonal direction with respect to the substrate. An independent claim is included for semiconductor memory device manufacturing method. |
