| 摘要 |
Provided is a film forming method capable of maintaining the film forming rate at a high level and improving the uniformness of the width of the film within the film's surface. The method is a film forming method which forms a thin film on the surface of a processed substance (W) within a processing container (4) capable of evacuating using a feed gas and a reaction gas and creates the thin film by mixing the feed gas and an inert gas at a gas undercurrent unit (33) to form a gas mixture and in turn supply the gas mixture and the reaction gas into the processing container. As a result, the film forming rate is maintained at a high level and the uniformness of the width of the film within the film's surface is improved. [Reference numerals] (33) Mixed gas;(93) Disaster device;(96) Equipment control unit;(98) Storage medium;(AA) Vacuum exhaust |
