MEMORY DEVICE INCLUDING ANTIFUSE PROGRAMMABLE MEMORY CELL ARRAY

摘要

A memory device including a programmable anti-fuse cell array is provided. The memory device according to embodiments of the invention includes a plurality of word lines, a memory cell array including a plurality of anti-fuse memory cells connected between a plurality of bit lines and a plurality of high voltage lines, a column decoder outputting a plurality of bit line selection signals by decoding a bit line address of a target memory cell among the anti-fuse memory cells, a row decoder outputting a plurality of word line selection signals by decoding a word line address of the target memory cell, and a data sensor amplifier sensing and amplifying data of the target memory cell by being connected to the bit lines.