VARIABLE RESISTANCE MEMORY DEVICE AND DATA STORAGE DEVICE INCLUDING THE SAME

摘要

The present invention relates to a non-volatile memory device and, more specifically, to a variable resistance memory device. The variable resistance memory device comprises memory cells, control logic, and a writing driver. The memory cells are arranged on an area which a word line and a bit line are intersected. The control logic generates a command flag which shows a program operation mode based on a program command provided from an external device and controls the program operation of the memory cells according to the command flag. The writing driver is activated in response to the command flag and applies program current to the memory cells.