| 摘要 |
The present invention relates to an opposed terminal structure having a supporting substrate having conductivity. A nitride semiconductor having a light-emitting layer is also provided along with a first terminal formed on one face of the nitride semiconductor and a second terminal formed on another face of the nitride semiconductor. The first terminal is formed in a pattern of one of a rectangular shape, a plurality of lines, a square shape, a grid pattern, a plurality of dots, a rhombus, a parallelogram, a mesh shape, a striped shape, and a ramose shape branching from one into a plurality of branches. The thermal expansion coefficient of the supporting substrate is approximately the same as the thermal expansion coefficient of the nitride semiconductor. The supporting substrate is formed of nitride semiconductor. |
