发明名称 |
Resist underlayer film forming composition for electron beam lithography |
摘要 |
There is provided a resist underlayer film forming composition for an electron beam lithography that is used in a device production process using electron beam lithography and is effective for reducing adverse effects caused by an electron beam to obtain a favorable resist pattern, and a method of forming a resist pattern using the resist underlayer film forming composition for electron beam lithography. The resist underlayer film forming composition for an electron beam lithography comprises a polymer compound having a repeating unit structure that contains a halogen atom, and a solvent, and the composition is applied in a form of film between a film to be processed for forming a transferring pattern on a substrate and a resist film for an electron beam lithography, and used for manufacturing a semiconductor device. The polymer compound preferably contains at least 10% by mass of a halogen atom. |
申请公布号 |
US8603731(B2) |
申请公布日期 |
2013.12.10 |
申请号 |
US20080449737 |
申请日期 |
2008.02.19 |
申请人 |
ENOMOTO TOMOYUKI;SAKAGUCHI TAKAHIRO;SAKAMOTO RIKIMARU;NAGAI MASAKI;NISSAN CHEMICAL INDUSTRIES, LTD. |
发明人 |
ENOMOTO TOMOYUKI;SAKAGUCHI TAKAHIRO;SAKAMOTO RIKIMARU;NAGAI MASAKI |
分类号 |
G03F7/40;G03F7/11;H01L21/027 |
主分类号 |
G03F7/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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