发明名称 |
PROCESS FOR PRODUCING HIGH-PURITY LANTHANUM, HIGH-PURITY LANTHANUM, SPUTTERING TARGET COMPRISING HIGH-PURITY LANTHANUM, AND METAL GATE FILM COMPRISING HIGH-PURITY LANTHANUM AS MAIN COMPONENT |
摘要 |
A high-purity lanthanum, characterized by having a purity of 5N or more excluding rare earth elements and gas components, and α-ray count number of 0.001 cph/cm2 or less. A method for producing the high-purity lanthanum characterized by obtaining lanthanum crystal by subjecting a crude lanthanum metal raw material having a purity of 4N or less excluding the gas component to molten salt electrolysis at a bath temperature of 450 to 700° C., subjecting the lanthanum crystal to de-salting treatment, and removing volatile substances by performing electron beam melting, wherein the high-purity lanthanum has a purity of 5N or more excluding rare earth elements and gas components, and α-ray count number of 0.001 cph/cm2 or less. The object of the present invention is providing a technique capable of efficiently and stably providing a high-purity lanthanum with low α-ray, a sputtering target made from the high-purity lanthanum, and a metal gate thin film having the high-purity lanthanum as the main component. |
申请公布号 |
KR20130135307(A) |
申请公布日期 |
2013.12.10 |
申请号 |
KR20137023527 |
申请日期 |
2012.09.04 |
申请人 |
JX NIPPON MINING & METALS CORPORATION |
发明人 |
TAKAHATA MASAHIRO;SATOH KAZUYUKI;GOHARA TAKESHI;NARITA SATOYASU |
分类号 |
C25C3/34;C22B9/22;C22C28/00;C23C14/34 |
主分类号 |
C25C3/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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