发明名称 |
Semiconductor device including trenches having particular structures |
摘要 |
A semiconductor device includes a substrate, a first region and a second region. Each of the first region and second region includes a trench, an epitaxial layer including a source/drain having a first part and a second part, the first part extending from a top surface of the substrate to a top surface of the source/drain and the second part extending from the top surface of the substrate to a bottom surface of the source/drain in the trench. The cross-sectional shape of the first part of the source/drain of the first region is the same as the cross-sectional shape of the first part of the source/drain of the second region. The cross-sectional shape of the second past of the source/drain of the find region is different from the cross-sectional shape of the second part of the source/drain of the second region. |
申请公布号 |
US8604551(B2) |
申请公布日期 |
2013.12.10 |
申请号 |
US201313842002 |
申请日期 |
2013.03.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HYUN SUNG-WOO;SHIN YU-GYUN;LEE SUN-GHIL;YOON HONG-SIK |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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