| 摘要 |
A semiconductor storage device includes: a memory cell array having memory cells positioned at respective intersections between a plurality of first wirings and a plurality of second wirings, each of the memory cells having a rectifier element and a variable resistance element connected in series; and a control circuit selectively driving the first and second wirings. The plurality of first wirings that are specified and selectively driven at the same time by one of a plurality of address signals are separately arranged with other first wirings interposed therebetween within the memory cell array when a certain potential difference is applied to a selected memory cell positioned at an intersection between the first and second wirings by the control circuit. |
