发明名称 |
Method of forming a three-dimensional semiconductor memory device comprising sub-cells, terraced structures and strapping regions |
摘要 |
Provided is a three-dimensional semiconductor memory device. The three-dimensional semiconductor memory device includes a substrate that has a cell array region including a pair of sub-cell regions and a strapping region interposed between the pair of sub-cell regions. A Plurality of sub-gates are sequentially stacked on the substrate in each of the sub-cell regions, and interconnections are electrically connected to extensions of the stacked sub-gates, respectively, which extend into the strapping region. Each of the interconnections is electrically connected to the extensions of the sub-gate which are disposed in the pair of the sub-cell regions, respectively, and which are located at the same level. |
申请公布号 |
US8603906(B2) |
申请公布日期 |
2013.12.10 |
申请号 |
US201313779334 |
申请日期 |
2013.02.27 |
申请人 |
SHIM SUNIL;HUR SUNGHOI;KIM HANSOO;JANG JAEHOON;CHO HOOSUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIM SUNIL;HUR SUNGHOI;KIM HANSOO;JANG JAEHOON;CHO HOOSUNG |
分类号 |
H01L21/3205;H01L21/4763 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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