发明名称 SYSTEM AND METHOD FOR CRITICAL DIMENSION REDUCTION AND PITCH REDUCTION
摘要 A method of forming a feature includes forming a mask of a first material on an underlying layer, the mask having an incorrect profile. The profile of the mask is corrected and a feature is formed in the underlying layer. A system for forming a feature is also disclosed.
申请公布号 KR101339542(B1) 申请公布日期 2013.12.10
申请号 KR20077030841 申请日期 2007.12.28
申请人 发明人
分类号 G03F7/20;H01L21/027 主分类号 G03F7/20
代理机构 代理人
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