| 摘要 |
PURPOSE: An image sensing device implementing a pixel with two different type transistors is provided to output an output signal of a photo diode to a comparator through two different type transistors, thereby reducing the number of column lines. CONSTITUTION: An image sensing device comprises a pixel (110) to output an output signal of a photo diode (PD) through first type transistors (MN1, MN2) and a second type transistor (MP); a comparator (121) to compare the output signal to a reference signal; and memories (123,124) to stores an output size based on a result of the comparison. The pixel is a heterogeneous 3-Tr pixel and constituted with the PD, two N-channel metal-oxide semiconductors (N-MOS), and one P-channel metal-oxide semiconductor (P-MOS). The 3-Tr pixel outputs the output signal of the PD through the two N-MOSs and the one P-MOS. [Reference numerals] (123) Memory 1; (124) Memory 2; (125) Counter |
