| 摘要 |
<p>Described are a device and a method for reflective electron beam lithography. The device includes a substrate, conductive layers which are formed on the substrate, separated by an insulating filler structure, and arranged in parallel, and apertures in each conductive layer. An aperture in one conductive layer is vertically arranged with regard to an aperture in another conductive layer. The peripheral region of each aperture includes a suspended conductive layer. [Reference numerals] (102) Provide a substrate;(104) Deposit a first insulating material on the substrate;(106) Deposit and pattern a photosensitive material on the upper part of the first insulating material;(108) Etch the first insulating material;(110) Deposit a second insulating material;(112) Perform a CMP process;(114) Deposit a conductive material on the second insulating material;(116) Deposit and pattern the photosensitive material on the upper part of the conductive material;(118) Etch the conductive material;(120) Repeat Step 104-Step 118;(122) Etch the second insulating material</p> |
