发明名称 Read only memory device with complementary bit line pair
摘要 A read only memory cell circuit is provided. The memory cell circuit includes at least one memory cell. A pair of bit lines associated with each memory cell is provided which form a complementary output. The at least one memory cell is configured to be coupled to first or second of the bit line pair.
申请公布号 US8605480(B2) 申请公布日期 2013.12.10
申请号 US201113178856 申请日期 2011.07.08
申请人 JAIN NITIN;JAIN PIYUSH;STMICROELECTRONICS INTERNATIONAL N.V. 发明人 JAIN NITIN;JAIN PIYUSH
分类号 G11C17/00 主分类号 G11C17/00
代理机构 代理人
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