发明名称 |
Data writing method for flash memory and controller using the same |
摘要 |
A data writing method for a flash memory is provided. The data writing method includes: dividing a new data into at lease one sub-data by the size of a writing unit; selecting one of a plurality of spare blocks from the flash memory as a substitute block for substituting a data block, wherein the new data is to be written into the data block; sequentially writing the sub-data having the size of the writing unit into the substitute block in the writing unit; and storing the sub-data not having the size of the writing unit into a temporary area. The writing efficiency of the flash memory can be improved by temporarily storing the sub-data not having the size of the writing unit into the temporary area and then writing the sub-data not having the size of the writing unit with subsequent data into the substitute block. |
申请公布号 |
US8606987(B2) |
申请公布日期 |
2013.12.10 |
申请号 |
US20080052348 |
申请日期 |
2008.03.20 |
申请人 |
YANG JIUNN-YEONG;CHANG JUI-HSIEN;CHU CHIEN-HUA;SU JIAN-YO;YEH CHIH-KANG;PHISON ELECTRONICS CORP. |
发明人 |
YANG JIUNN-YEONG;CHANG JUI-HSIEN;CHU CHIEN-HUA;SU JIAN-YO;YEH CHIH-KANG |
分类号 |
G06F12/00;G06F13/00;G06F13/28 |
主分类号 |
G06F12/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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