| 摘要 |
An organic transistor includes an insulating substrate, a gate electrode on the substrate, a gate insulating layer disposed over the substrate and the gate electrode, a source and a drain electrode on the gate insulating layer, a nonpolar macromolecular insulating underlayer disposed on the gate insulating layer at least between the source electrode and the drain electrode, and an organic semiconductor layer disposed on the source electrode and the drain electrode and on the insulating underlayer between the source electrode and the drain electrode. |
