发明名称 |
Semiconductor laser device and manufacturing method thereof |
摘要 |
A semiconductor laser device includes: a substrate having a principal plane; a photonic crystal layer having an epitaxial layer of gallium nitride formed on substrate in a direction in which principal plane extends and a low refractive index material having a refractive index lower than that of epitaxial layer; an n-type clad layer formed on substrate; a p-type clad layer formed on substrate; an active layer that is interposed between n-type clad layer and p-type clad layer and emits light when a carrier is injected thereinto; and a GaN layer that covers a region directly on photonic crystal layer. Thus, the semiconductor laser device can be manufactured without fusion. |
申请公布号 |
US8605769(B2) |
申请公布日期 |
2013.12.10 |
申请号 |
US20050665286 |
申请日期 |
2005.12.06 |
申请人 |
YOSHIMOTO SUSUMU;MATSUBARA HIDEKI;SAITOU HIROHISA;MISAKI TAKASHI;NAKANISHI FUMITAKE;MORI HIROKI;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
YOSHIMOTO SUSUMU;MATSUBARA HIDEKI;SAITOU HIROHISA;MISAKI TAKASHI;NAKANISHI FUMITAKE;MORI HIROKI |
分类号 |
H01S3/08 |
主分类号 |
H01S3/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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