SEMICONDUCTOR DEVICE PARTIALLY DOPED SINGLE GRAPHENE BY USING PALLADIUM-HYDROGEN SYSTEM AND METHOD OF MANUFACTURING THE SAME

摘要

The present invention provides a method for manufacturing a semiconductor device having excellent stability and productivity through a simple lithography process with graphene having good electrical conductivity and palladium allowing easy exchange of electrons with the graphene and a semiconductor device manufactured by the method. The method for manufacturing a semiconductor device according to the present invention comprises the steps of forming a groove in a substrate and sequentially laminating a gate electrode and a dielectric inside the groove; applying graphene on the substrate to touch the upper surface of the dielectric; patterning the applied graphene in a desired shape using a lithography process; applying photoresist to the substrate so that palladium can be coated on a part of the patterned graphene and then patterning the photoresist through the lithography process; depositing the palladium on the patterned photoresist to coat the palladium on a part of the graphene; removing all photoresist and palladium except for the palladium coated on the part of the graphene; and forming a source electrode and a drain electrode to be connected to both sides of the graphene.