| 摘要 |
<p>The present invention relates to an IC production, more specifically, to a metal gate electrode. An exemplary structure for a semiconductor device includes: a substrate including a main surface; a first rectangle gate electrode, which includes a first layer of a multilayer material, on the main surface; a first dielectric substance neighboring one side of the first rectangle gate electrode; and a second dielectric substance on the remaining three sides of the first rectangle gate electrode while the first and second dielectric substances encloses the first rectangle gate electrode. [Reference numerals] (102) Providing a substrate including a P-activation area and an N-activation area separated from each other by a separating area;(104) Forming a dummy strip on the top of the P-activation area, the separating area, and the N-activation area within an interlayer dielectric (ILD) layer;(106) Removing the dummy strip to form a first opening within the ILD layer;(108) Partially filling the first opening with a first metal composition;(110) Filling the first opening with a sacrifice layer;(112) Removing the first part of the first metal composition and the first part of the sacrifice layer to form a second opening which extends from the top of the separating area and from the entire area of the N-activation area within the ILD layer;(114) Removing the second part of the sacrifice layer to form a third opening which is extended from the top of the separating area and the entire area of the P-activation area within the ILD layer (the third opening is connected to the second opening);(116) Filling the second and third openings using a second metal composition which is different from the first metal composition;(118) Removing a part of the second metal composition to form a fourth opening on the top of an insulation area</p> |
