发明名称 DESIGN SCHEME FOR CONNECTOR SITE SPACING AND RESULTING STRUCTURES
摘要 A system and a method for preventing cracks in a passivation layer are provided. In one embodiment of the present invention, a contact pad has a first diameter, and an opening which penetrates through a passivation layer to a second diameter, wherein the first diameter is greater than the second diameter by a first distance of about 10 μm. In another embodiment of the present invention, an underbump metallization part is formed through the opening, wherein the underbump metallization part has a third diameter which is greater than the first diameter by a second distance of about 5 μm. In yet another embodiment of the prevent invention, the sum of the first distance and the second distance is greater than about 15 μm.
申请公布号 KR20130135042(A) 申请公布日期 2013.12.10
申请号 KR20130030384 申请日期 2013.03.21
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHUANG YAO CHUN;CHUANG CHITA;LIU HAO JUIN;KUO CHEN CHENG;CHEN CHEN SHIEN
分类号 H01L21/60 主分类号 H01L21/60
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