| 摘要 |
PURPOSE: A method for manufacturing a phase change memory device of a multi resistance property using a block copolymer and the phase change memory of the multi resistance property manufactured by the same are provided to manufacture a device with a desirable size using a self-assembly structure. CONSTITUTION: A bottom electrode layer is laminated on a substrate. A phase change layer is successively laminated on the bottom electrode layer. A block copolymer is coated on the phase change layer. A self-assembly is performed by thermal process after the block copolymer is coated on the phase change layer. A part of the self-assembled block copolymer is selectively removed. [Reference numerals] (AA) Laminating a phase change memory element layer of a bottom electrode layer and a multi-layer phase change layer; (BB) Self-assembly which is performed by coating and thermally processing a block copolymer; (CC) Manufacturing a block copolymer mold by eliminating a part of the block copolymer; (DD) Eliminating the mold and laminating a metal layer for a mask; (EE) Reactivity ion etching |
