发明名称 |
Nonvolatile memory architecture |
摘要 |
Representative implementations of memory devices have transistors between memory cells of a memory device. Memory devices may be arranged in memory arrays. The use of transistors may include alternately providing electrical isolation or current paths between pairs or groups of memory cells in a memory array. |
申请公布号 |
US8605479(B2) |
申请公布日期 |
2013.12.10 |
申请号 |
US20100911603 |
申请日期 |
2010.10.25 |
申请人 |
DRAY CYRILLE;NEY ALEXANDRE;HOFMANN KARL;INFINEON TECHNOLOGIES AG |
发明人 |
DRAY CYRILLE;NEY ALEXANDRE;HOFMANN KARL |
分类号 |
G11C5/06 |
主分类号 |
G11C5/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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