发明名称 RE-DISTRIBUTION LAYER VIA STRUCTURE AND METHOD OF MAKING SAME
摘要 <p>The embodiment is a semiconductor device including a contact pad on a substrate. The contact pad is arranged on an IC on the substrate. A first passivation layer is arranged on the contact pad. A first via is in the first passivation layer. The first via has at least four sides. The first via is extended to the contact pad.</p>
申请公布号 KR20130134991(A) 申请公布日期 2013.12.10
申请号 KR20120088965 申请日期 2012.08.14
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LAI FENG LIANG;YANG KAI YUAN;LEU CHIA JEN;HUNG SHENG CHIANG
分类号 H01L23/48 主分类号 H01L23/48
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