发明名称 |
RE-DISTRIBUTION LAYER VIA STRUCTURE AND METHOD OF MAKING SAME |
摘要 |
<p>The embodiment is a semiconductor device including a contact pad on a substrate. The contact pad is arranged on an IC on the substrate. A first passivation layer is arranged on the contact pad. A first via is in the first passivation layer. The first via has at least four sides. The first via is extended to the contact pad.</p> |
申请公布号 |
KR20130134991(A) |
申请公布日期 |
2013.12.10 |
申请号 |
KR20120088965 |
申请日期 |
2012.08.14 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LAI FENG LIANG;YANG KAI YUAN;LEU CHIA JEN;HUNG SHENG CHIANG |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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