发明名称 Maintaining mask integrity to form openings in wafers
摘要 One or more openings in an organic mask layer deposited on a first insulating layer over a substrate are formed. One or more openings in the first insulating layer are formed through the openings in the organic mask using a first iodine containing gas. An antireflective layer can be deposited on the organic mask layer. One or more openings in the antireflective layer are formed down to the organic mask layer using a second iodine containing gas. The first insulating layer can be deposited on a second insulating layer over the substrate. One or more openings in the second insulating layer can be formed using a third iodine containing gas.
申请公布号 US8603921(B2) 申请公布日期 2013.12.10
申请号 US201113190392 申请日期 2011.07.25
申请人 SHIMIZU DAISUKE;KIM JONG MUN;APPLIED MATERIALS, INC. 发明人 SHIMIZU DAISUKE;KIM JONG MUN
分类号 H01L21/302;H01L21/461 主分类号 H01L21/302
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