发明名称 CAPACITOR FOR INTERPOSERS AND METHODS OF MANUFACTURE THEREOF
摘要 Disclosed is a method for designing and manufacturing a capacitor for those substrates such as an interposer. A through via is formed on an interposer and a capacitor is formed between a low level metalizing layer and a high level metalizing layer. The capacitor can be a flat-type capacitor with dual capacitor dielectric layers.
申请公布号 KR20130135005(A) 申请公布日期 2013.12.10
申请号 KR20120109905 申请日期 2012.10.04
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHANG CHUN HUA;YEH DER CHYANG;CHENG KUANG WEI;LIU YUAN HUNG;HOU SHANG YUN;CHIOU WEN CHIH;JENG SHIN PUU
分类号 H01L21/8242;H01L27/108 主分类号 H01L21/8242
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