SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

摘要

The present invention relates to a substrate processing apparatus capable of easily controlling the quality of a thin film and enhancing uniformity in deposition of the thin film deposited on the substrate and a substrate processing method. According to the present invention, the substrate processing apparatus includes a process chamber; a substrate support part supporting at least one substrate and installed on the bottom of the process chamber; a chamber lead covering the upper part of the process chamber to face the substrate support part; and a gas injection part partly injecting an activated source gas onto the substrate and installed in the chamber lead to partly face the substrate support part. The gas injection part forms plasma by a plasma formation gas and injects the source gas to a part of the plasma region where the plasma is formed to activate the source gas.