| 摘要 |
The present invention relates to a semiconductor test socket and a manufacturing method thereof. According to the present invention, the semiconductor test socket includes an insulation main body; a plurality of insulation sheets which are arranged at intervals inside the insulation main body in a horizontal direction while facing each other; and a plurality of conductive plating patterns which are arranged on each insulation sheet at intervals along the longitudinal direction and each of which forms a conductive pattern in a vertical direction. Each conductive plating pattern is formed by plating a metal material on each insulation sheet, and the upper edge and the lower edge of each insulation sheet protrude higher than both side edges. By doing so, it is possible to overcome thickness restriction in a height direction while implementing a fine pattern. |
