发明名称 |
PROGRAMMING METHOD OF NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM HAVING THE SAME |
摘要 |
<p>The programming method of a nonvolatile memory device includes a step of storing loaded data in at least one first latch, storing recovering reference bit for recovering a fail bit in a particular state in a second latch, applying a program pulse on a memory cell, validating the memory cell's program at a first level, and changing the data stored in the at least one first latch into data with a pass pattern when the program validation has passed; and a step of performing a data recovery action, which includes reading the memory cell at a second level and recovering the loaded data using the read data and recovering reference bit.</p> |
申请公布号 |
KR20130133419(A) |
申请公布日期 |
2013.12.09 |
申请号 |
KR20120056641 |
申请日期 |
2012.05.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JI SANG;KIM, MOO SUNG;CHOI, KI HWAN |
分类号 |
G11C16/34;G11C16/10 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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