| 摘要 |
<p>The present invention relates to a method for forming a semiconductor device capable of increasing a channel size by surrounding a pin by a gate in a 6F^2 buried saddle fin gate structure transistor. The method for forming the semiconductor device comprises a step for defining an active area by forming a device separation film on a semiconductor substrate; a step for forming a first recess having a predetermined depth on the active area; a step for forming a sacrificial film having a predetermined thickness on the lower part in the first recess; a step for forming a pin on the upper part of the sacrificial film; a step for separating the pin from the active area to the upper part by removing the sacrificial film; and a step for forming a gate in order to surround the pin.</p> |
