APPARATUS FOR GROWING SINGLE CRYSTAL SILICON INGOTS

摘要

An embodiment of the present invention comprises: a melting pot in which melting silicon for growing single crystal ingots is put; a side heater heating the melting pot by being arranged at the side of the melting pot; a lower heater heating the melting pot by being arranged in the lower part of the melting pot; a heat generation control unit determining the amount of the heat generation from the side and lower heaters, determining the amount of the lower side heat of the lower heater separately depending on the length of the growing single crystal silicon ingots, and controlling the side and lower heaters, respectively. [Reference numerals] (AA) FSF survival rate (%);(BB) Peptide 1