| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of an SOI wafer that an organic material, becoming a gettering site source, can be adsorbed uniformly in-plane and stably to the bonding interface of a bonding SOI wafer.SOLUTION: When producing an SOI wafer by bonding two silicon wafers, organic material-containing gas is blown directly to the surface of at least one wafer out of the two silicon wafers, while rotating the wafer, and a predetermined amount of organic material is adsorbed before two wafers are bonded. TVOC concentration of the organic material-containing gas being blown to the wafer is measured by means of a VOC meter 26. Based on the measurement results, at least one of the flow rate of carrier gas being blown and the organic material concentration in the carrier gas is controlled. |
