METHOD FOR MANUFACTURING THIN FILM BONDED SUBSTRATE FOR SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film bonded substrate for a semiconductor element capable of eliminating a conventional conductive barrier layer, and preventing a decrease in a reflective layer function due to a high temperature step and occurrence of a crack due to the difference between thermal expansion coefficients.SOLUTION: A method for manufacturing a thin film bonded substrate for a semiconductor element includes the steps of: growing an epitaxial growth layer on a first substrate composed of a bulk crystal (S1); forming an ion implantation layer from a boundary surface of the first substrate forming a boundary with one surface of the epitaxial growth layer to a prescribed depth (S2); bonding a third substrate to the other surface of the epitaxial growth layer (S3); separating the first substrate using the ion implantation layer as the boundary and forming a crystalline thin film separated from the first substrate on the one surface of the epitaxial growth layer (S4); bonding a second substrate to the crystalline thin film (S5); and removing the third substrate (S6).