| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a high on-state current in a memory cell region, and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device comprises: a memory cell region having a first transistor and a peripheral circuit region having a second transistor. The first transistor includes: a first source electrode and a first drain electrode; a first embedded gate insulation film which is formed along inner walls of trenches and has relative permeability higher than relative permeability of a silicon oxide; and an embedded gate electrode. The second transistor includes: a second source electrode and a second drain electrode; a first on-board gate insulation film having relative permeability higher than relative permeability of the silicon oxide; and an on-board gate electrode. A first Hf content percentage representing a content percentage of hafnium in the first embedded gate insulation film is different from a second Hf content percentage representing a content percentage of hafnium in the second on-board gate insulation film. |
