| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which resolves a problem that, at an edge of a cell mat region without a guard ring, a lower electrode of a crown-shaped capacitor is deformed by stress of a supporting body supporting the lower electrode in a beam form as a device is miniaturized, thereby characteristics and reliability of the device are deteriorated.SOLUTION: A semiconductor device comprises: a plurality of cylindrical first conductive films 7 erected and arranged on a principal surface of a substrate; a supporting film 5 contacted with the plurality of first conductive films and arranged in a beam form; a stress action film 6 arranged to contact with the supporting film 5 and causing a stress to the first conductive films 7 in a direction opposite to that of the supporting film 5; a dielectric film 11 covering inner and outer walls of the first conductive films 7; and a second conductive film 12 covering the dielectric film 11. |
