CIS IMAGE SENSORS WITH EPITAXY LAYERS AND METHODS FOR FORMING THE SAME

摘要

A method includes a step for performing a first epitaxy to grow a fist epitaxy layer of a first conductivity type, and a step for performing a second epitaxy to grow a second epitaxy layer of a second conductivity type opposite to the first conductivity type on the first epitaxy layer. A diode is formed on the first and the second expitaxy layer. The method further includes a step for forming a gate dielectric on the first epitaxy; a step for forming a gate electrode on the gate dielectric; and a step for injecting the uppermost part of the first and the second expitaxy layer to form a source/drain region near the gate dielectric.