| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element in which an active layer has improved internal quantum efficiency.SOLUTION: A nitride semiconductor light-emitting element comprises: an active layer 16 composed of an InGaN-based nitride semiconductor; and a buffer layer 15 provided immediately below the active layer 16. The buffer layer 15 includes a second buffer layer 15b represented as an expression InGaN (0≤x2<1, x2<x1) and a first buffer layer 15a represented as an expression InGaN (0<x1≤1), which are alternately stacked from an n-type GaN layer 14 to the active layer 16. In the buffer layer 15, at least one layer of the first buffer layer 15a has an In composition x1 larger than an In composition of a quantum well layer of the active layer 16. In addition, an In composition x1 of the first buffer layer arranged at a position nearest to the active layer 16 is lower than an In composition of the active layer 16. |
