| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor element capable of improving driving ability of the semiconductor element and suppressing deterioration in element characteristics.SOLUTION: There is provided a method of manufacturing a semiconductor element comprising: a step S1 of forming a layer on a surface of a substrate, the layer having a melting point higher than the substrate; a step S2 of heating the layer by irradiating the layer with laser and melting a part of the surface of the substrate, thereby making the part of the surface of the substrate in a wave pattern; a step S3 of removing the layer and exposing the part of the surface of the substrate; and a step S4 of forming a semiconductor element including the exposed part of the surface of the substrate. |
