| 摘要 |
PROBLEM TO BE SOLVED: To provide an imaging device that suppresses the occurrence of a leak current occurring in association with switching from on operation to off operation of a transistor, and can achieve high-quality photographed images.SOLUTION: An imaging device has a plurality of pixels including photoelectric conversion element and a field effect type transistor. The transistor includes a semiconductor layer 126, first and second gate electrodes 120A and 120B that are arranged opposite to each other with the semiconductor layer 126 therebetween, and a source electrode 128A and a drain electrode 128B that are electrically connected with the semiconductor layer 126. The transistor further has a non-overlapping area d2 where the first and second gate electrodes 120A and 120B do not partially overlap with each other. |
