| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that suppresses current flowing when the device is not operated and is operated to reduce battery power consumption of a product such as a mobile product, and that eliminates malfunction and stopping of a system due to thermal runaway.SOLUTION: The semiconductor device comprises an SRAM including second conductivity-type driver transistors M3, M4, second conductivity-type access transistors M5, M6, first conductivity-type load transistors M1, M2 and a leakage suppression transistor M10. The leakage suppression transistor M10 is a second conductivity type, and has: a gate connected to a source of the access transistor M6; a drain connected to a common source of the driver transistors M3, M4; and a source connected to a power supply VSS. The access transistor M5 has a drain connected to a bit line RBL, and a gate connected to a word line RWL. The access transistor M6 has a drain connected to a bit line WBL, and a gate connected to a word line WWL. |
