| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of preventing a decrease in write margin when a write operation is performed using a high voltage.SOLUTION: The semiconductor storage device comprises: an SRAM memory cell 12 including a transfer transistor; a bit line BL connected to one end of a current path of the transfer transistor; a word line WL connected to a gate of the transfer transistor; a bit line negative potential circuit 17 that sets a potential of the bit line to be negative when data is written into the SRAM memory cell; a switching circuit 19 that connects the bit line negative potential circuit with the bit line and sets the potential of the bit line to be a ground potential after a first period elapsed, when data is written into the SRAM memory cell. |
