MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC FIELD DETECTOR AND PHYSICAL QUANTITY DETECTOR

摘要

PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element easy in manufacturing and having a large magnetoresistance effect.SOLUTION: A magnetoresistance effect element includes: a CoFeB film 2 formed above a substrate 20; an MgO film 3 formed on the CoFeB film 2; a Heusler alloy 4 which is formed above the MgO film 3 and is a free layer; a non-magnetic layer 5 formed on the Heusler alloy 4; and a fixed layer 41. The Heusler alloy comprises ABC or AB(CD) (0≤X≤1) represented by three or more kinds of elements.