A semiconductor device is provided. The semiconductor device includes a conductive pattern which is arranged on the semiconductor substrate. Provided are a first conductive line and a second conductive line which are arranged on the conductive pattern and are located on the same level. A line separating pattern is arranged between the first conductive line and the second conductive line. Provided is a first vertical structure which passes through the first conductive line and the conductive pattern. Provided is a second vertical structure which passes through the second conductive line and the conductive pattern. Provided is an auxiliary pattern which passes through the conductive pattern and is in contact with the line separating pattern.
申请公布号
KR20130133566(A)
申请公布日期
2013.12.09
申请号
KR20120056925
申请日期
2012.05.29
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
YOO, JIN HYUK;JANG, DAE HYUN;KONG, YOO CHUL;SHIN, KYOUNG SUB