| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide single crystal capable of reducing dislocation.SOLUTION: A method for producing a silicon carbide single crystal includes a step A of arranging a seed crystal 220 constituted of a silicon carbide single crystal and a raw material 210 of the silicon carbide single crystal in a crucible 20, and a step B of subliming the raw material 210 and recrystallizing the sublimed raw material 210 on the seed crystal 220 by heating the seed crystal 220 and the raw material 210. In the step B, growth stress of the seed crystal 220 is ≤12 MPa. Pressure of ≥300 MPa is applied beforehand onto the seed crystal 220 under a temperature condition of ≥1,500°C and ≤2,000°C. |
