发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device which includes a through electrode provided in a substrate, and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device manufacturing method comprises: forming a through hole 20 which penetrates a semiconductor substrate 10 from a principal surface 13 to a principal surface 11 to expose a conductive layer 16 provided on the principal surface 11 side on the bottom; forming a seed layer 24 extending from the bottom of the through hole to the principal surface 13 through a lateral face of the through hole; forming a conductive layer 26 on the seed layer by first plate processing; forming a resist 28 on the conductive layer 26; forming an opening hole 29 to expose the through hole 20 on the resist by development processing; and forming a conductive layer 30 on the conductive layer 26 exposed on the resist by second plate processing by using the resist in which the opening hole is formed as a mask. |
申请公布号 |
JP2013247254(A) |
申请公布日期 |
2013.12.09 |
申请号 |
JP20120120284 |
申请日期 |
2012.05.25 |
申请人 |
LAPIS SEMICONDUCTOR CO LTD |
发明人 |
NOMURA AKIHIKO |
分类号 |
H01L21/3205;H01L21/768;H01L23/522 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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