MANUFACTURING APPARATUS FOR SILICON CRYSTAL INGOT AND ETCHING DEGREE MEASURING INSTRUMENT OF GRAPHITE CRUCIBLE THEREOF

摘要

PURPOSE: An apparatus for manufacturing a silicon single crystal ingot and an apparatus for measuring the etching degree of a graphite crucible are provided to accurately determine the replacement time of the graphite crucible by accurately measuring the etching degree of the graphite crucible. CONSTITUTION: A graphite crucible supports a quartz crucible which receives silicon melt. An etching degree measuring device (200) slides in contact with the inner side of the graphite crucible and measures the etching degree of the graphite crucible. The etching degree measuring device includes a jig (210) and a step measuring unit (220). The jig is selectively fixed to the upper side of the graphite crucible. The step measuring unit measures the etching degree of the graphite crucible by measuring the step of the inner side of the graphite crucible. The jig includes a contact jig part (211) in contact with the inner side of the graphite crucible and a fixed jig part (212) formed on the upper side of the contact jig part.