发明名称 FILM FORMATION METHOD
摘要 The present invention is to form a polyimide layer used for an controllable insulating layer in a process for forming the polyimide layer on a substrate. A wafer (W) is heated to generate the polyimide layer (1). For example, a first process gas including a first monomer of PMDA and a nonaromatic monomer, for example, a second process gas including a second monomer of HMDA are periodically supplied. When the process gas is changed, an exchange gas is supplied to a reaction pipe (32) and the monomers are not mixed with each other in the reaction pipe (32). [Reference numerals] (AA) 1 cycle;(BB) Time
申请公布号 KR20130133140(A) 申请公布日期 2013.12.06
申请号 KR20130059760 申请日期 2013.05.27
申请人 TOKYO ELECTRON LIMITED 发明人 YAMAGUCHI TATSUYA;NIINO REIJI
分类号 H01L21/312;H01L21/31 主分类号 H01L21/312
代理机构 代理人
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