IMAGING DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

This manufacturing method of an imaging device (10) involves: a step for producing multiple imaging chips (30) by cutting an imaging chip substrate (30W) on which multiple light-receiving units (31) are formed on a first primary surface (30SA) and electrode pads (32) are formed around each of the light-receiving units (31); a step for producing a bonded wafer (40W) by adhering, through a transparent adhesive layer (41), the first primary surface (30SA) of imaging chips (30) determined to be non-defective by inspection to a glass wafer (20W) different in at least size or shape from the imaging chip substrate (30W); a step for filling with a sealing member (42) the area between the imaging chips (30) adhered to the bonded wafer (40W); a processing step involving a step for processing the bonded wafer (40W) by reducing the thickness of the imaging chip substrate (30W) from the side of the second principal surface (30SB) and planarizing the processing surface, and a step for forming through-wiring (33) connected with the electrode pads (32); a step for forming, on the second principal surface (30SB), an external connection electrode (34) connected with the electrode pad (32) via the through-wiring (33); and a step for cutting the bonded wafer (40W) into individual pieces.