发明名称 |
THERMOELECTRIC MATERIAL, METHOD FOR PRODUCING SAME, AND THERMOELECTRIC CONVERSION MODULE USING SAME |
摘要 |
<p>This thermoelectric material is provided with a semiconductor substrate, a semiconductor oxide film that is formed on the substrate, and a thermoelectric layer that is arranged on the oxide film. The semiconductor oxide film is provided with a first nano-opening, and the thermoelectric layer is in the form of a plurality of semiconductor nano-dots piled up on the first nano-opening so as to have a particle packed structure. At least some of the plurality of semiconductor nano-dots have second nano-openings formed in the surfaces thereof, and are connected with each other through the second nano-openings, with the crystal orientations thereof being aligned with each other. This thermoelectric material can be produced through: a step wherein a semiconductor substrate is oxidized, thereby forming a semiconductor oxide film thereon; a step wherein a first nano-opening is formed in the oxide film; and a step wherein a plurality of semiconductor nano-dots are piled up on the first nano-opening by epitaxial growth. A thermoelectric material having excellent thermoelectric conversion performance can be achieved by this configuration.</p> |
申请公布号 |
WO2013179897(A1) |
申请公布日期 |
2013.12.05 |
申请号 |
WO2013JP63580 |
申请日期 |
2013.05.15 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
NAKAMURA, YOSHIAKI;ISOGAWA, MASAYUKI;UEDA, TOMOHIRO;KIKKAWA, JUN;SAKAI, AKIRA;HOSONO, HIDEO |
分类号 |
H01L35/32;H01L35/14;H01L35/34 |
主分类号 |
H01L35/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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