发明名称 |
Estructura de dispositivo semiconductor y procedimiento de fabricación de la misma |
摘要 |
A semiconductor device structure comprising a first bulk crystal semiconductor material and a second bulk crystal semiconductor material provided on a surface of the first bulk crystal semiconductor material with or without a deliberate intermediate region, the second bulk crystal semiconductor material being a Group II-VI material dissimilar to the first bulk crystal semiconductor material, wherein portions of the first and/or second bulk crystal semiconductor material have been selectively removed to produce a patterned area of reduced thickness of the first and/or second bulk crystal semiconductor and preferably to expose a patterned area of the said surface of the first and/or second bulk crystal semiconductor material.
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申请公布号 |
ES2432797(T3) |
申请公布日期 |
2013.12.05 |
申请号 |
ES20080762623T |
申请日期 |
2008.06.30 |
申请人 |
DURHAM SCIENTIFIC CRYSTALS LTD;KROMEK LIMITED |
发明人 |
BASU, ARNAB;ROBINSON, MAX |
分类号 |
H01L31/0336;H01L31/0352;H01L31/18 |
主分类号 |
H01L31/0336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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